Photoluminescence of the D lines in silicon containing a high concentration of carbon after a two-step isochronal anneal

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Abstract
Photoluminescence at the photon energies of 0.808 and 0.874 eV was observed in silicon containing a high concentration of carbon after a two‐step isochronal anneal. The annealing sequence consisted of a low‐temperature isochronal anneal and a 1050 °C anneal, respectively. The observed luminescence had the photon energies corresponding to those of the D lines which are known to arise from the interstitial‐type dislocation loops. In silicon containing a high concentration of carbon, a formation of the dislocation loops was hypothesized to occur via a condensation of the excess silicon interstitials, originated from the agglomerates of interstitial carbons.