Electromigration-induced vacancy behavior in unpassivated thin films
- 1 April 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (7) , 3231-3233
- https://doi.org/10.1063/1.351367
Abstract
A model is constructed where a nonequilibrium vacancy concentration resulting from electromigration‐induced mass flux divergences is responsible for damage in the form of wedge‐like and/or crack‐like voids as well as thinning of extended areas. The damage morphology is primarily a function of temperature.This publication has 4 references indexed in Scilit:
- TEM in-situ observation of electromigration damage in Al-Cu strips I. Constant DC stressingPhysica Status Solidi (a), 1981
- The effect of high d.c. density stressing on pre-existing voids in thin gold filmsThin Solid Films, 1979
- Nucleation of voids and their growth during electromigrationJournal of Applied Physics, 1973
- Time-dependent void nucleation during electromigrationMaterials Science and Engineering, 1971