Studies of atomic and molecular fluorine reactions on silicon surfaces
- 17 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (11) , 718-720
- https://doi.org/10.1063/1.96700
Abstract
X-ray photoelectron spectroscopy (XPS) and an ultrahigh vacuum compatible microwave discharge effusive beam source have been used to study the reactions of atomic and molecular fluorine on Si(111) surfaces. Fluorine uptake and changes in binding energy and peak shape for the Si 2p and F 1s XPS peaks have been measured as functions of fluorine exposure. The results indicate that molecular fluorine is dissociatively chemisorbed to form an SiF2-like surface species. This reaction saturates at approximately one monolayer surface coverage. In contrast, atomic fluorine uptake extends well beyond the monolayer regime to include several Si layers. Additionally, as the uptake increases, the reaction product becomes SiF4-like. These findings are compared with previously reported results for XeF2 adsorption.Keywords
This publication has 12 references indexed in Scilit:
- Reaction of atomic fluorine with siliconJournal of Applied Physics, 1985
- Reactions of XeF2 chemisorbed on Si(111) 7×7Applied Physics Letters, 1985
- Synchrotron photoemission investigation: Fluorine on silicon surfacesApplied Physics Letters, 1984
- Plasma-assisted etchingPlasma Chemistry and Plasma Processing, 1982
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981
- The reaction of fluorine atoms with siliconJournal of Applied Physics, 1981
- Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on siliconJournal of Applied Physics, 1980
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Attenuation lengths of low-energy electrons in solidsSurface Science, 1974
- ESCA study of fractional monolayer quantities of chemisorbed gases on tungstenChemical Physics Letters, 1973