Electrical and optical evidence of resonant tunneling of holes in an n+i n+ double-barrier diode structure under illumination
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1) , 33-35
- https://doi.org/10.1063/1.102638
Abstract
Using low‐temperature photocurrent, steady‐state and time‐resolved photoluminescence, we have shown the importance of hole transport in the optical properties of n+in+ double‐barrier diodes under operation. We have also seen evidence of resonant tunneling of minority holes in such an illuminated double‐barrier diode.Keywords
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