Recent developments in Ultra thin oxynitride gate dielectrics
- 1 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 89-96
- https://doi.org/10.1016/0167-9317(95)00022-z
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Growth Rate and Characterization of Silicon Oxide Films Grown in N 2 O Atmosphere in a Rapid Thermal ProcessorJournal of the Electrochemical Society, 1994
- Oxynitride gate dielectrics for p/sup +/-polysilicon gate MOS devicesIEEE Electron Device Letters, 1993
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxidesIEEE Electron Device Letters, 1993
- Model for dielectric growth on silicon in a nitrous oxide environmentApplied Physics Letters, 1993
- Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applicationsIEEE Electron Device Letters, 1992
- High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N 2 OJournal of the Electrochemical Society, 1991
- MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/OIEEE Electron Device Letters, 1991
- Growth kinetics of ultrathin SiO2 films fabricated by rapid thermal oxidation of Si substrates in N2OJournal of Applied Physics, 1991
- Thickness and Compositional Nonuniformities of Ultrathin Oxides Grown by Rapid Thermal Oxidation of Silicon in N 2 OJournal of the Electrochemical Society, 1991