Excitation spectroscopy in GaP-rich GaxIn1-xP alloys doped with nitrogen
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (12) , 1193-1197
- https://doi.org/10.1016/0038-1098(81)90986-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Local-environment effect on the nitrogen bound state inalloys: Experiments and coherent-potential approximation theoryPhysical Review B, 1980
- Alloying induced shift between excitation and luminescence of the nitrogen bound exciton in GaPxAs1−x alloysSolid State Communications, 1979
- Luminescence and direct experimental observations of band-structure effects in nitrogen-doped GaxIn1−xP alloysJournal of Applied Physics, 1977
- Nitrogen trap bound states in In1−xGaxPSolid State Communications, 1976
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxPJournal of Physics and Chemistry of Solids, 1976
- Croissance épitaxique en phase liquide de GaxIn1-xpRevue de Physique Appliquée, 1976
- Exciton Energy Transfer in GaP: NPhysical Review Letters, 1975
- Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01Journal of Applied Physics, 1971
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967