Nitrogen trap bound states in In1−xGaxP
- 1 November 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (6) , 549-551
- https://doi.org/10.1016/0038-1098(76)91057-7
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAszSolid State Communications, 1976
- Direct Study of the Nature of Nitrogen Bound States in:NPhysical Review Letters, 1976
- Evidence for Radiative Recombination in () Involving an Isolated Nitrogen Impurity State Associated with the MinimumPhysical Review Letters, 1976
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxPJournal of Physics and Chemistry of Solids, 1976
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxPJournal of Crystal Growth, 1974
- Pumping of GaAs1−x Px : N (at 77 °K, for x≲0.53) by an electron beam from a gas plasmaJournal of Applied Physics, 1973
- Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)Journal of Applied Physics, 1973
- Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3<x<0.4)Solid State Communications, 1973
- Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : NJournal of Applied Physics, 1972
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966