Characterization Of Er-Doped III-V Nitride Epilayers Prepared by Mombe
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Er-doped AIN epilayers have been grown using metal-organic molecular beam epitaxy (MOMBE) with controlled Er densities. Cell temperatures greater than 1000°C were required for the Er solid source in order to achieve significant Er concentrations in the epilayers. Er densities in the 1019 to 1020 cm−3 range were confirmed using secondary ion mass spectrometry (SIMS), quantified using implanted standards. The epilayers were optically excited using an argon-ion laser and infrared luminescence spectra were measured over the temperature range 13 to 300 K. The spectra are centered at 1.54 μm and display features typical of the Er3+ configuration. These data demonstrate that high densities of Er atoms can be incorporated in AIN films during epitaxial growth and that the Er atoms give rise to the intra-4f transitions of the trivalent Er3+ ion.Keywords
This publication has 7 references indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Luminescence properties of erbium in III–V compound semiconductorsSolid-State Electronics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- 1.54-μm photoluminescence from Er-implanted GaN and AlNApplied Physics Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Growth of III–V materials by metalorganic molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1993
- Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materialsElectronics Letters, 1989