Growth and characterization of indium arsenide thin films
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 1109-1115
- https://doi.org/10.1007/bf03030217
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Two-dimensional electron gas magnetic field sensorsApplied Physics Letters, 1990
- OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindiumJournal of Electronic Materials, 1986
- Transport coefficients of InAs epilayersApplied Physics Letters, 1974
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and ArsineJournal of the Electrochemical Society, 1974
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and ArsineJournal of the Electrochemical Society, 1974
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1973
- Observation of Surface Bound State and Two-Dimensional Energy Band by Electron TunnelingPhysical Review Letters, 1970
- Electron Mobility in Plastically Deformed GermaniumPhysica Status Solidi (b), 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965