Electronic properties and stability of first-row impurities in semiconductors
- 1 February 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (2) , 199-210
- https://doi.org/10.1080/13642812.1983.9728432
Abstract
We have used our one-electron Green function method to study the stability of deep a1 symmetry states associated with the first-row impurities (e.g. oxygen) in Si, GaP and GaAs. We suggest a simple two-centre model which helps to identify the driving mechanism of the instability and present numerical results which shed some light upon the applicability of the Ham mechanism in diamond and zinc-blende structures. We find that—in the limit of small displacements—all a1 levels in the gap are stable irrespective of the details concerning one-eloctron potentials.Keywords
This publication has 15 references indexed in Scilit:
- Need for a New Metastable State of GaP:in the Dean-Henry-Kukimoto Model of GaP: OPhysical Review Letters, 1981
- Defect states dominated by localised potentials in semiconductorsJournal of Physics C: Solid State Physics, 1981
- Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed SiliconPhysical Review Letters, 1980
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979
- Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancyPhysical Review B, 1979
- Optimisation studies of localised defect calculations in semiconductorsJournal of Physics C: Solid State Physics, 1978
- Pseudopotential calculations of the effect of displacement upon the impurity levels introduced by deep donor oxygen in GaAs, GaP, Si and nitrogen in diamondSolid State Communications, 1977
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Recombination processes associated with “Deep states” in gallium phosphideJournal of Luminescence, 1970