Plasma-enhanced metalorganic chemical vapor deposition of c-axis oriented and epitaxial films of ZnO at low substrate temperatures

Publisher Website
Google Scholar
Abstract
Thin‐film zinc oxide with a high degree of c‐axis orientation normal to the substrate surface has been grown on a glass substrate by plasma‐enhanced metalorganic chemical vapor deposition of diethylzinc at a substrate temperature of 200 °C and rf input powers higher than 220 W in carbon dioxide and oxygen atmospheres. An epitaxial (112̄0) ZnO film has been also grown on a (011̄2) sapphire substrate at an rf input power of 80 W and a substrate temperature of 200 °C.