Optical properties of InGaN quantum wells
- 13 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 59 (1-3) , 298-306
- https://doi.org/10.1016/s0921-5107(98)00359-6
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum DotsJapanese Journal of Applied Physics, 1998
- Catastrophic optical damage in GaInN multiple quantum wellsApplied Physics Letters, 1998
- Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well numberJournal of Crystal Growth, 1998
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light EmittersJapanese Journal of Applied Physics, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial FilmsJapanese Journal of Applied Physics, 1997
- Recombination dynamics of localized excitons in N-N multiple quantum wellsPhysical Review B, 1997
- Cathodoluminescence Studies of InGaN Quantum WellsMRS Proceedings, 1997
- Localized Donors in Gan: Spectroscopy Using Large PressuresMRS Proceedings, 1997
- Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin filmsApplied Physics Letters, 1996