Photoluminescence of gallium arsenide encapsulated with aluminum nitride and silicon nitride
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8) , 623-625
- https://doi.org/10.1063/1.91211
Abstract
Aluminum nitride and silicon nitride films were deposited on lightly doped n‐type GaAs : Si by low‐energy ion beam sputtering. Mechanically, the films were stable at annealing temperatures above 900 °C. In contrast to bare GaAs and previously reported encapsulation with Si3N4, where the 1.36‐eV line appears at relatively low annealing temperatures, there was no change in the photoluminescence spectrum until the samples were annealed at 800 °C in the case of aluminum nitride and 900 °C for silicon nitride.Keywords
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