InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy
- 1 April 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4) , 388-391
- https://doi.org/10.1016/s0022-0248(02)02432-6
Abstract
No abstract availableKeywords
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