Optical characteristics of Mn+-ion-implanted GaN epilayers
- 1 November 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 245 (3-4) , 193-197
- https://doi.org/10.1016/s0022-0248(02)01664-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Electric-field control of ferromagnetismNature, 2000
- Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substratesJournal of Applied Physics, 2000
- Raman scattering study of Ga1−xMnxN crystalsApplied Physics Letters, 2000
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Mn impurity inepilayersPhysical Review B, 1999
- Yellow luminescence and related deep levels in unintentionally doped GaN filmsPhysical Review B, 1999
- Raman scattering in ion-implanted GaNApplied Physics Letters, 1998
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Native defects in gallium nitridePhysical Review B, 1995
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989