Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing
- 4 January 1999
- journal article
- Published by Elsevier in Surface Science
- Vol. 419 (2-3) , 291-302
- https://doi.org/10.1016/s0039-6028(98)00807-3
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- Surface electronic structure of GaAs(311)A studied by angle-resolved photoelectron spectroscopySurface Science, 1996
- Reconstruction of the GaAs (311)AsurfacePhysical Review B, 1995
- Molecular-beam epitaxial GaAs/AlAs superlattices in the (311) orientationPhysical Review B, 1994
- Tunability of one-dimensional self-faceting on GaAs (311)A surfaces by metalorganic vapor-phase epitaxyApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Optical properties of a high-quality (311)-oriented GaAs/As single quantum wellPhysical Review B, 1993
- Semiconductor quantum-wire structures directly grown on high-index surfacesPhysical Review B, 1992
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAsSurface Science, 1987
- Low energy electron diffraction study of (221) and (311) GaAs surfacesJournal of Vacuum Science & Technology B, 1985