Phosphorus and boron implantation in 6H–SiC
- 15 May 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (10) , 6635-6641
- https://doi.org/10.1063/1.365236
Abstract
Phosphorus and boron ion implantations were performed at various energies in the 50 keV–4 MeV range. Range statistics of P+ and B+ were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400–1700 °C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250 keV/1.2×1015 cm−2 P implant, annealed at 1600 °C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8×102 Ω/□. The p-type conduction could not be measured for the B implants.This publication has 23 references indexed in Scilit:
- Phosphorus-related donors in 6H-SiC generated by ion implantationJournal of Applied Physics, 1996
- 4H-SiC MESFET's with 42 GHz f/sub max/IEEE Electron Device Letters, 1996
- Elevated temperature nitrogen implants in 6H-SiCJournal of Electronic Materials, 1996
- Aluminum and boron ion implantations into 6H-SiC epilayersJournal of Electronic Materials, 1996
- Al, Al/C and Al/Si implantations in 6H-SiCJournal of Electronic Materials, 1996
- Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbideIEEE Electron Device Letters, 1996
- The effects of N+ dose in implantation into 6h-sic epilayersJournal of Electronic Materials, 1995
- Progress in silicon carbide semiconductor electronics technologyJournal of Electronic Materials, 1995
- Semi-insulating 6H–SiC grown by physical vapor transportApplied Physics Letters, 1995
- Monolithic NMOS digital integrated circuits in 6H-SiCIEEE Electron Device Letters, 1994