Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 379-384
- https://doi.org/10.1016/0022-0248(94)90837-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystalsPhysica B: Condensed Matter, 1993
- The growth of diffusion doped ZnSe: Te epilayers by atmospheric pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Recombination kinetics of CdS: InJournal of Crystal Growth, 1992
- Picosecond Energy Transfer between Excitons and Defects in II-IV SemiconductorsMaterials Science Forum, 1992
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe filmsApplied Physics Letters, 1991
- Self-compensation through a large lattice relaxation in p-type ZnSeApplied Physics Letters, 1989
- Pair Spectra and "Edge Emission" in Zinc SelenidePhysical Review B, 1969
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965