ZnS:Mn Electroluminescent Thin Films Prepared by Multisource Deposition under Controlled Sulfur Vapor Pressure
- 1 May 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (5R)
- https://doi.org/10.1143/jjap.33.2605
Abstract
ZnS:Mn thin-film electroluminescent (TFEL) devices have been prepared by using a multisource deposition (MSD) method. A new technique of sulfur vapor pressure control has been developed for the thin-film growth at a high sulfur vapor pressure. Growth kinetics of ZnS:Mn thin films on the sulfur vapor pressure have been studied. It has been found that at sulfur vapor pressure higher than 0.1 Pa, the growth rate is limited by the effective amount of the Zn flux. The ZnS:Mn film grown at the sulfur vapor pressure of 0.85 Pa shows a smooth surface and has a uniform grain size of about 200 nm. The ZnS:Mn TFEL device shows the luminance of 300 cd/m2 and the efficiency of 3.5 lm/W at 30 V above the threshold voltage of 180 V with 60 Hz drive.Keywords
This publication has 7 references indexed in Scilit:
- Chemical vapor deposition of ZnS: Mn electroluminescent films in a low-pressure halogen transport systemJournal of Crystal Growth, 1991
- Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxyJournal of Crystal Growth, 1990
- MOCVD Preparation of Polycrystalline ZnS Films with Pronounced Columnar GrainsJapanese Journal of Applied Physics, 1987
- Transferred Charge in the Active Layer and EL Device Characteristics of TFEL CellsJapanese Journal of Applied Physics, 1987
- ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- Effect of growth temperature on the electronic energy band and crystal structure of ZnS thin films grown using atomic layer epitaxyJournal of Applied Physics, 1985
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977