Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (5) , 1223-1228
- https://doi.org/10.1109/16.129107
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- SMART-II: a three-dimensional CAD model for submicrometer MOSFET'sIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
- Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygenIEEE Transactions on Electron Devices, 1988
- 50-Å gate-Oxide MOSFET's at 77 KIEEE Transactions on Electron Devices, 1987
- Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET'sIEEE Transactions on Electron Devices, 1987
- Increase of resistance to hot carriers in thin oxide MOSFETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Submicrometer MOSFET structure for minimizing hot-carrier generationIEEE Transactions on Electron Devices, 1982
- Emission probability of hot electrons from silicon into silicon dioxideJournal of Applied Physics, 1977
- Electron trapping by radiation-induced charge in MOS devicesJournal of Applied Physics, 1976
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960