Thermal-equilibrium processes in undoped amorphous-silicon alloys

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Abstract
We have studied the effect of the rate of cooling from an elevated temperature on the defect distribution in undoped amorphous-silicon alloys. Three different techniques have been used: namely, photothermal deflection spectroscopy, solar-cell performance, and space-charge-limited conduction. We find that the rate of cooling has no effect on the solar-cell performance or the sub-band-gap absorption as measured by photothermal deflection spectroscopy. The density of states at the Fermi level as measured by space-charge-limited conduction shows a small increase (∼20%) if the sample is quenched from a temperature of ∼220°C.