On the mechanism of light-induced effects in hydrogenated amorphous silicon alloys
- 1 April 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (7) , 588-589
- https://doi.org/10.1063/1.94011
Abstract
We have investigated the effects of both forward bias current soaking in the dark and prolonged light exposure on the photovoltaic properties of lightly doped, n‐ and p‐type hydrogenated amorphous silicon Schottky barrier diodes. The results show that recombination rather than single carrier trapping is responsible for the light‐induced changes.Keywords
This publication has 9 references indexed in Scilit:
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Deep electron traps in hydrogenated amorphous siliconPhysical Review B, 1981
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Diffusion length of holes in a-Si:H by the surface photovoltage methodApplied Physics Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Light-induced effects in Schottky diodes on hydrogenated amorphous siliconApplied Physics Letters, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977