Highly Conducting and Transparent SnO2 Thin Films Prepared by RF Magnetron Sputtering on Low-Temperature Substrates
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L287
- https://doi.org/10.1143/jjap.27.l287
Abstract
Highly conducting and transparent thin films of undoped tin oxide (SnO2) are prepared on unheated substrates (≦90°C) by rf magnetron sputtering under an applied external dc magnetic field. The lowest resistivity obtained is 1.9×10-3 Ωcm. The SnO2 films with a sheet resistance below 200 Ω/s q and an average visible transmittance (between 400 and 700 nm) above 85%, and below 300 Ω/s q above 80% (including organic film substrate) can be obtained for the films deposited on glass substrates and organic film substrates, respectively.Keywords
This publication has 18 references indexed in Scilit:
- Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Properties of electron-beam-evaporated tin oxide filmsThin Solid Films, 1987
- Hydrogen plasma interactions with tin oxide surfacesThin Solid Films, 1984
- The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputteringThin Solid Films, 1984
- Efficiency of the a-Si:H solar cell and grain size of SnO2transparent conductive filmIEEE Electron Device Letters, 1983
- X-ray diffraction analysis of SnO2 films prepared by oxidation of tin filmsThin Solid Films, 1983
- Physical properties of tin oxide films deposited by oxidation of SnCl2Thin Solid Films, 1982
- Degradation of ITO Film in Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1981
- Sprayed films of indium tin oxide and fluorine-doped tin oxide of large surface areaThin Solid Films, 1981
- The Hall effect in polycrystalline and powdered semiconductorsReports on Progress in Physics, 1980