Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L186
- https://doi.org/10.1143/jjap.26.l186
Abstract
For the first time, photo-CVD of transparent and conducting SnO2 films has been achieved under irradiation by a low-pressure Hg lamp. It was confirmed that both resonance lines (254 nm, 185 nm) are effective for the activation of CVD-sources (O2, SnCl4, SbCl5). The structural, electrical and optical properties of undoped and Sb-doped SnO2 films prepared by the photo-CVD method were evaluated. Resistivity as low as 5.48×10-3 ohm·cm with high optical transmission (80%) was obtained in Sb-doped SnO2 films (80 nm in thickness).Keywords
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