Trench DMOS transistor technology for high-current (100 A range) switching

This publication has 11 references indexed in Scilit:

• Numerical and experimental comparison of 60 V vertical double-diffused MOSFETs and MOSFETs with a trench-gate structure
  Solid-State Electronics, 1989
• Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm²
  IEEE Transactions on Electron Devices, 1987
• Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation
  IEEE Transactions on Electron Devices, 1987
• A new vertical power MOSFET structure with extremely reduced on-resistance
  IEEE Transactions on Electron Devices, 1985
• The COMFET—A new high conductance MOS-gated device
  IEEE Electron Device Letters, 1983
• The Oxidation of Shaped Silicon Surfaces
  Journal of the Electrochemical Society, 1982
• Drift of the breakdown voltage in p-n junctions in silicon (walk-out)
  Solid-State Electronics, 1977
• Avalanche injection into the oxide in silicon gate-controlled devices—II. Experimental results
  Solid-State Electronics, 1975
• Avalanche injection into the oxide in silicon gate-controlled devices—I theory
  Solid-State Electronics, 1975
• Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field
  Solid-State Electronics, 1974