Trench etching using a CBrF3 plasma and its study by optical emission spectroscopy
- 1 January 1991
- Vol. 42 (14) , 905-910
- https://doi.org/10.1016/0042-207x(91)90556-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- RIE etching of deep trenches in Si using CBrF3 and SF6 plasmaMicroelectronic Engineering, 1987
- A New CBrF3 Process for Etching Tapered Trenches in SiliconJournal of the Electrochemical Society, 1987
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Mechanisms of radical production in radiofrequency discharges of CF3Cl, CF3Br, and certain other plasma etchants: Spectrum of a transient speciesJournal of Applied Physics, 1980
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980