RIE etching of deep trenches in Si using CBrF3 and SF6 plasma
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4) , 553-558
- https://doi.org/10.1016/0167-9317(87)90087-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Formation of deep holes in silicon by reactive ion etchingJournal of Vacuum Science & Technology B, 1987
- Etch behaviour and lateral etch rates of trilevel resist systems in an rie-system using SOG and Ti intermediate layersMicroelectronic Engineering, 1985
- An improved trilevel resist system for submicron optical lithographyJournal of Vacuum Science & Technology B, 1985
- An Introduction to LithographyPublished by American Chemical Society (ACS) ,1983
- Mechanisms of radical production in radiofrequency discharges of CF3Cl, CF3Br, and certain other plasma etchants: Spectrum of a transient speciesJournal of Applied Physics, 1980