Decomposition of palladium acetate films with a microfocused ion beam

Abstract
Submicron Pd features have been fabricated on Si and SiO2 substrates by microfocused Ga+ ion beam exposure of spin-on palladium acetate, [Pd(O2CCH3)2]3, films. Electrical conductivity measurements were made on the exposed features as a function of ion dose for nominal linewidths of 1 and 10 μm. The sheet conductivity in the two cases is comparable and increases dramatically in the exposure dose range between 2×1014 and 5×1014 ions/cm2. The conductivity of the exposed lines is further increased after heating in a hydrogen furnace. Potential applications of this process include mask repair and integrated circuit modification.

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