Compositional Disordering of In0.53Ga0.47As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6A) , L1039
- https://doi.org/10.1143/jjap.28.l1039
Abstract
In0.53Ga0.47As/InP multiple-quantum well (MQW) structures were disordered using a dopant-free technique for the first time. MQW disordering was accomplished by deposition of a Si3N4 cap followed by repetitive rapid thermal annealing (RRTA) at 800°C. The optical transmission spectrum for the capped region is blue-shifted by 84 nm relative to a capless region in the 1.5 µm wavelength region. Such a large blue-shift could not be achieved by conventional rapid thermal annealing. The disordered region extends at least 1.7 µm into the MQW structures.Keywords
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