Si-Induced Disordering of In0.53Ga0.47As/In0.52Al0.48As Multiquantum Well Structures
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1731
- https://doi.org/10.1143/jjap.27.l1731
Abstract
Disordering of In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures by Si doping and following annealing was demonstrated for the first time. Sputtering Auger electron depth profiling and photoluminescence measurements revealed that a Si-doped In0.53Ga0.47As/In0.52Al0.48As multiquantum well structure is easily disordered during annealing. The mechanism of disordering is discussed based on the fact that disordering takes place when the Si doping level exceeds 1.3×1019 cm-3.Keywords
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