GaAs homojunction rib waveguide directional coupler switch
- 1 March 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (3) , 1325-1327
- https://doi.org/10.1063/1.327817
Abstract
An electro-optic directional coupler switch has been fabricated with a GaAs homojunction structure and tested at 1.15 μm. Each single mode guide is made in a n-LPE layer grown on a n+ substrate, the p+ rib used to confine the light being obtained by Zn diffusion and chemical etching. A calculation of the losses in the planar approximation roughly yields the large values of attenuation measured for TE and TM modes (∼8 cm−1). By reversely biasing the ’’stepped Δβ’’ junctions with less than 17 V, more than 13 dB power isolation has been achieved for both switching states on a 6.3-mm-long device. Large improvements of the characteristics are expected from the additional design parameters provided by GaAs-GaAlAs double heterostructure.This publication has 14 references indexed in Scilit:
- GaAs rib-waveguide directional-coupler switch with Schottky barriersElectronics Letters, 1978
- GaAlAs Schottky directional-coupler switchApplied Physics Letters, 1977
- GaAs directional-coupler switch with stepped Δβ reversalApplied Physics Letters, 1977
- GaAs p+n−n+ directional-coupler switchApplied Physics Letters, 1976
- Switched directional couplers with alternating ΔΒIEEE Journal of Quantum Electronics, 1976
- Zinc-diffused two-dimensional optical waveguides in n-type GaAsApplied Optics, 1976
- Low-loss GaAs p+n−n+ three-dimensional optical waveguidesApplied Physics Letters, 1976
- GaAs electro-optic directional-coupler switchApplied Physics Letters, 1975
- Metal-Clad Optical Waveguides: Analytical and Experimental StudyApplied Optics, 1974
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964