Monitoring plasma over-etching of Wafer-bonded Microstructures
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 269-272
- https://doi.org/10.1109/sensor.1995.717168
Abstract
We have demonstrated that wafer-level probing of electrostatic pull-in test structures provides a means to monitor MEMS process uniformity and integrity. Test structures, which have proved to be useful in determining MEMS material properties, are used here to identify and quantify a non-uniform plasma over-etch used in the final release of silicon wafer-bonded microstructures. MEMCAD simulations confirm that the changes in test structure geometry do indeed account for the behavior seen experimentally.Keywords
This publication has 6 references indexed in Scilit:
- A novel technique and structure for the measurement of intrinsic stress and Young's modulus of thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A finite element method for determining structural displacements resulting from electrostatic forcesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Self-consistent simulation and modelling of electrostatically deformed diaphragmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 3D coupled electro-mechanics for MEMS: applications of CoSolve-EMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Dynamic micromechanics on silicon: Techniques and devicesIEEE Transactions on Electron Devices, 1978
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973