5.9 ps/gate operation with 0.1 mu m gate-length GaAs MESFET's
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 894-896
- https://doi.org/10.1109/iedm.1988.32956
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC'sIEEE Transactions on Electron Devices, 1988
- Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layerApplied Physics Letters, 1987