Abstract
Circuit simulations of resonant tunneling double-barrier diodes (DBD) are reported. Small signal equivalent circuit considerations predict whether a circuit is stable when a DBD is biased in the negative differential resistance (NDR) region, and also predict the nature of an oscillation (sinusoidal-like or exponential) if unstable. Large signal analyses give the temporal behavior of an oscillation. The nonlinear differential equation is solved by a piecewise linear model to a high accuracy. Oscillations give rise to an apparent plateaulike structure or even a peak structure in the NDR region when measuring the dc current-voltage characteristic.