Circuit simulation of resonant tunneling double-barrier diode
- 1 November 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4792-4794
- https://doi.org/10.1063/1.341204
Abstract
Circuit simulations of resonant tunneling double-barrier diodes (DBD) are reported. Small signal equivalent circuit considerations predict whether a circuit is stable when a DBD is biased in the negative differential resistance (NDR) region, and also predict the nature of an oscillation (sinusoidal-like or exponential) if unstable. Large signal analyses give the temporal behavior of an oscillation. The nonlinear differential equation is solved by a piecewise linear model to a high accuracy. Oscillations give rise to an apparent plateaulike structure or even a peak structure in the NDR region when measuring the dc current-voltage characteristic.This publication has 11 references indexed in Scilit:
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