Thermal donor formation and the loss of oxygen from solution in silicon heated at 450 °C
- 20 June 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25) , 2139-2141
- https://doi.org/10.1063/1.99557
Abstract
A calibration is established which allows the thermal donor (TD) concentration in heat-treated Czochralski (CZ) silicon to be determined taking account of the fact that TD centers are double donors. It is then shown that for CZ samples heated at 450 °C, 13 oxygen atoms are lost from solution during the time taken to produce one TD center. It appears that TD production is a minority process in relation to oxygen precipitation.Keywords
This publication has 6 references indexed in Scilit:
- Activation energy for thermal donor formation in siliconApplied Physics Letters, 1987
- Thermal donors in silicon: oxygen clusters or self-interstitial aggregatesJournal of Physics C: Solid State Physics, 1985
- On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski SiliconMRS Proceedings, 1985
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- The Statistics of Divalent Impurity Centres in a SemiconductorProceedings of the Physical Society. Section B, 1956