Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
- 16 October 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (16) , 2482-2484
- https://doi.org/10.1063/1.1318228
Abstract
The incorporation of nitrogen in the low percentage range is investigated in a different III–V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and GaInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nitrogen species.Keywords
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