Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2364-2366
- https://doi.org/10.1063/1.123852
Abstract
Visible and infrared photoluminescence (PL) have been obtained from Pr-implanted GaN films using focused-ion-beam (FIB) direct write utilizing a Pr–Pt liquid alloy ion source. FIB implantation was performed on GaN films grown by molecular-beam epitaxy (MBE), hydride vapor-phase epitaxy, and metalorganic chemical-vapor deposition. After annealing, strong room-temperature emission was observed in the red (at 650 nm) and in the infrared (at several wavelengths including 0.96, 1.3, and 1.9 μm). Essentially identical PL spectra were obtained in the implanted GaN films as in the in situ Pr-doped GaN films grown by MBE.Keywords
This publication has 14 references indexed in Scilit:
- Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on SiApplied Physics Letters, 1999
- Green electroluminescence from Er-doped GaN Schottky barrier diodesApplied Physics Letters, 1998
- Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1998
- Visible emission from Er-doped GaN grown by solid source molecular beam epitaxyApplied Physics Letters, 1998
- Er doping of GaN during growth by metalorganic molecular beam epitaxyApplied Physics Letters, 1998
- Photoluminescence of erbium-implanted GaN and in situ-doped GaN:ErApplied Physics Letters, 1998
- Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopyApplied Physics Letters, 1997
- Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substratesApplied Physics Letters, 1995
- 1.54-μm photoluminescence from Er-implanted GaN and AlNApplied Physics Letters, 1994