Mobility studies of field-effect transistor structures basedon anthracene single crystals

The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor $\left(\mathrm{FET}\right)$ structure. The $\mathrm{FET}$ mobility $\left({\mu }_{\mathrm{FET}}\right)$ revealed the nonmonotonous, reliant on gate-voltage $\left(V_g\right)$ , temperature dependence with the maximum ${\mu }_{\mathrm{FET}}\sim 0.02{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$ at $T\sim 170–180\mathrm{K}$ and $V_g\sim -30\mathrm{V}$ . At temperatures below $180\mathrm{K}$ the mobility decreases and becomes thermally activated with the $V_g$ -dependent activation energy $E_a\sim 40–70\mathrm{meV}$ governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in $\mathrm{FET}$ structures based on anthracene single crystals.