Excess generation-recombination noise in reverse biased Schottky-barrier diodes

This publication has 12 references indexed in Scilit:

• Investigation of deep impurities in schottky diodes on high-resistivity silicon
  Physica Status Solidi (a), 1988
• Comments on the collective and corpuscular approach of generation-recombination noise in a p-n junction
  Solid-State Electronics, 1987
• The influences of traps on the generation-recombination current in silicon diodes
  Solid-State Electronics, 1980
• Noise and admittance of the generation—Recombination current involving SRH centers in the space-charge region of junction devices
  IEEE Transactions on Electron Devices, 1976
• Generation-recombination characteristic behavior of silicon diodes
  Physica Status Solidi (a), 1973
• Diode characteristics and edge effects of metal-semiconductor diodes
  Solid-State Electronics, 1973
• A theoretical investigation on the generation current in silicon p-n junctions under reverse bias
  Solid-State Electronics, 1972
• Noise due to generation and recombination of carriers in p-n junction transition regions
  IEEE Transactions on Electron Devices, 1968
• Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
  Proceedings of the IRE, 1957
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952