50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 481-484 vol.1
- https://doi.org/10.1109/mwsym.2002.1011660
Abstract
Both single-ended and differential distributed amplifiers were developed using 0.15 /spl mu/m GaAs power PHEMT for 40 Gb/s EO modulator driver circuits. The single-ended approach has achieved 12 dB gain up to 50 GHz, greater than 5 dB gain control range and output voltage >6.5 Vp-p measured at 10 Gb/s. Power transfer data shows Psat of 20 dBm at 40 GHz, which translates to 6.3 Vp-p swing at 40 GHz. The differential approach has achieved 8 dB gain up to 45 GHz and differential output voltage of 9 Vp-p measured at 10 Gb/s. These amplifiers are suitable for use In fiber-optic communication systems.Keywords
This publication has 5 references indexed in Scilit:
- 45 GHz distributed amplifier with a linear 6-Vp-p output for a 40 Gb/s LiNbO/sub 3/ modulator driver circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InP and GaAs components for 40 Gbps applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 40 Gbit/s high voltage modulator driver in P-HEMTtechnologyElectronics Letters, 1999
- 40-Gb/s high-power modulator driver IC for lightwave communication systemsIEEE Journal of Solid-State Circuits, 1998