Comparison of the Si(111) (7 × 7) and (1×1)surfaces
- 31 December 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 44 (10) , 1449-1453
- https://doi.org/10.1016/0038-1098(82)90029-1
Abstract
No abstract availableKeywords
Funding Information
- Kurata Memorial Hitachi Science and Technology Foundation
- Ministry of Education
This publication has 20 references indexed in Scilit:
- Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfacesPhysical Review B, 1981
- Similarity of the laser- and thermally annealed Si(111) surfacesPhysical Review B, 1981
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- Buckling Reconstruction on Laser-Annealed Si(111) SurfacesPhysical Review Letters, 1981
- Atomic structure of an impurity-stabilized Si{111} surface: Refinement using a combined-layer methodPhysical Review B, 1980
- Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status reportJournal of Vacuum Science and Technology, 1980
- Surface optical constants of silicon and germanium derived from electron-energy-loss spectroscopyPhysical Review B, 1975
- Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed SurfacesPhysical Review Letters, 1975
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Energy-Level Spectra of Electrons at the (111), (110), and (100) Surfaces of Silicon and Germanium by Ion-Neutralization SpectroscopyPhysical Review B, 1973