Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis
- 1 July 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 142 (3) , 355-360
- https://doi.org/10.1016/s0168-583x(98)00291-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layersJournal of Applied Physics, 1996
- Importance of channeled implantation to the synthesis of erbium silicide layersApplied Physics Letters, 1995
- Epitaxial growth of transition-metal silicides on siliconMaterials Science Reports, 1991
- Epitaxial growth of ErSi2 on (111) SiThin Solid Films, 1990
- Formation of epitaxial yttrium and erbium silicide on Si(111) in ultra-high vacuumApplied Surface Science, 1989
- Electronic transport properties of epitaxial erbium silicide/silicon heterostructuresApplied Physics Letters, 1989
- Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devicesJournal of Vacuum Science & Technology A, 1987
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Epitaxial silicidesThin Solid Films, 1982
- Contact reaction between Si and rare earth metalsApplied Physics Letters, 1981