Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layersKeywords
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