Two-valley model for studying the low temperature phases inn-type inversion layers of semiconductors
- 1 June 1978
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 30 (2) , 165-166
- https://doi.org/10.1007/bf01320981
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Stress and temperature dependence of the electronic properties of n-type silicon inversion layersJournal of Physics C: Solid State Physics, 1977
- Electronic ground state of inversion layers in many-valley semiconductorsPhysical Review B, 1977
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Stability Theory of the Magnetic Phases for a Simple Model of the Transition MetalsPhysical Review B, 1966