Metastable surface layer of a silicon nitride thin film growing by photo-chemical vapor deposition
- 2 August 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 218 (2-3) , L490-L496
- https://doi.org/10.1016/0039-6028(89)90150-7
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition ConditionJapanese Journal of Applied Physics, 1988
- A Polarization Modulation Infrared Reflection Technique Applied to Study of Thin Films on Metal and Semiconductor SurfacesAnalytical Sciences, 1985
- Investigations of N-H and Si-N Bonding Configurations in Hydrogenated Amorphous Silicon Nitride Films by Infrared Absorption SpectroscopyJapanese Journal of Applied Physics, 1985
- Structural and Electrical Properies of Photo-CVD Silicon Nitride FilmJapanese Journal of Applied Physics, 1984
- IR absorption in glow-discharge-deposited and alloy filmsPhysical Review B, 1984
- Infrared reflection-absorption spectroscopy of surface species: a comparison of Fourier transform and dispersion methodsThe Journal of Physical Chemistry, 1984
- Nitrogen-bonding environments in glow-discharge—depositedfilmsPhysical Review B, 1983
- Multiple adsorbates on copper surfaces in formic acid vapor observed by polarization modulation infrared spectroscopyThe Journal of Physical Chemistry, 1983
- The effect of index of refraction on the position, shape, and intensity of infrared bands in reflection-absorption spectra*1Journal of Catalysis, 1971
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971