Electrical and optical properties of silicon doped InP grown by gas source MBE
- 2 July 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 104 (2) , 457-462
- https://doi.org/10.1016/0022-0248(90)90147-d
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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