A Possibility of ALE Growth of InN by using InCl3
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- GaAs growth by atomic layer epitaxy using diethylgalliumchlorideApplied Physics Letters, 1988
- Electron mobility in indium nitrideElectronics Letters, 1984
- Synthesis of III–V semiconductor nitrides by reactive cathodic sputteringThin Solid Films, 1976
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970