Atomic Layer Epitaxy of GaAs Using GaCl3 and AsH3
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1350-1352
- https://doi.org/10.1143/jjap.29.l1350
Abstract
It was demonstrated that the atomic layer epitaxy (ALE) of GaAs could be performed by using GaCl3/H2 and AsH3/H2. The GaCl3 is a powder at room temperature and can be supplied from outside the reactor, and is essentially carbon free. The ALE growth temperature was from 200°C to 500°C. The growth temperature of 200°C is the lowest ever reported in GaAs ALE. The fact that the ALE was performed at 200°C indicates that Ga was supplied as GaCl3, suggesting the possibility of AlGaAs ALE using AlCl3, GaCl3 and AsH3.Keywords
This publication has 6 references indexed in Scilit:
- Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl3, GaCl3 and AsH3/H2Japanese Journal of Applied Physics, 1989
- Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl3 with AsH3/H2Japanese Journal of Applied Physics, 1988
- Solid Composition of In1-xGaxAs Grown by the Halogen Transport Atomic Layer EpitaxyJapanese Journal of Applied Physics, 1988
- Growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985