Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl3, GaCl3 and AsH3/H2

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Abstract
AlAs and AlGaAs were successfully grown by a directly reacting of AlCl3, GaCl3 and AsH3 for the first time. The AlCl3 and GaCl3 were contained in stainless steel evaporators (60°C–120°C), and supplied by He carrier gas. The AsH3 (10% in H2) was supplied directly to the deposition zone by H2 carrier gas during the growth. The AlAs layers could be grown in the temperature range from 550°C–700°C, and a maximum growth rate of 3.5 µm/h was obtained. The AlGaAs was grown at 600°C, with a typical growth rate of about 2 µm/h. The Al content was controlled in the entire composition range but was not linearly proportional to the Al content in the supplied gas. These results suggest the possibility of new carbon-free gas sources for the chemical beam epitaxy (CBE) and atomic layer epitaxy (ALE).

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