Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3 and AsH3 System
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1594
- https://doi.org/10.1143/jjap.27.l1594
Abstract
A thermodynamic analysis of the VPE growth of GaAs using GaCl3 and AsH3 is described. It is shown that most of the GaCl3 converts to GaCl and HCl at about 650°C and that the growth of GaAs is possible by the GaCl3 and AsH3 system without using a high temperature zone. The experimental features of the system can be explained well by equilibrium model.Keywords
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